| PART |
Description |
Maker |
| NX6351GP33-AZ NX6351GP29-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| BHP-300 |
High Pass Filter 50楼? 290 to 3000 MHz
High Pass Filter 50惟 290 to 3000 MHz
High Pass Filter 50Ω 290 to 3000 MHz
|
Mini-Circuits
|
| NHP-300 |
High Pass Filter 50楼? 290 to 3000 MHz
High Pass Filter 50惟 290 to 3000 MHz
High Pass Filter 50Ω 290 to 3000 MHz
|
Mini-Circuits
|
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| P3500SC-E3 P3100SAA P3100SC-E3 P2600SAA |
Silicon Surge Protector, 395 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA, PLASTIC, SMB, 2 PIN
Silicon Surge Protector, 350 V, 20 A, SILICON SURGE PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN
Silicon Surge Protector, 350 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA, PLASTIC, SMB, 2 PIN
Silicon Surge Protector, 290 V, 20 A, SILICON SURGE PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN
|
Vishay Semiconductors
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| P4C1256L55PCLF P4C1256L70PCLF P4C1256L55PILF P4C12 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 0.330 INCH, ROHS COMPLIANT, SOP-28
32K X 8 STANDARD SRAM, 55 ns, PDSO28 0.330 INCH, SOP-28
32K X 8 STANDARD SRAM, 70 ns, PDSO28 0.330 INCH, SOP-28
32K X 8 STANDARD SRAM, 55 ns, PDSO28 0.330 INCH, ROHS COMPLIANT, SOP-28
LOW POWER 32K x 8 STATIC CMOS RAM
|
Pyramid Semiconductor, Corp.
Pyramid Semiconductor Corporation
Pyramid Semiconductor Corpo...
|
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET 350 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| BSP87E-6327 |
290 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET SMD, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
|
